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SQD50P04-13L
www.vishay.com
Vishay Siliconix
Automotive P-Channel 40 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
V DS (V)
R DS(on) ( ? ) at V GS = - 10 V
R DS(on) ( ? ) at V GS = - 4.5 V
I D (A)
Configuration
TO-252
Drain Connected to Tab
G
- 40
0.013
0.022
- 50
Single
S
FEATURES
? Halogen-free According to IEC 61249-2-21
Definition
? TrenchFET ? Power MOSFET
? Package with Low Thermal Resistance
? 100 % R g and UIS Tested
? Compliant to RoHS Directive 2002/95/EC
? AEC-Q101 Qualified d
G
D
S
D
Top View
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
P-Channel MOSFET
TO-252
SQD50P04-13L-GE3
ABSOLUTE MAXIMUM RATINGS (T C = 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
SYMBOL
V DS
V GS
LIMIT
- 40
± 20
UNIT
V
Continuous Drain Current
T C = 25 °C a
T C = 125 °C
I D
- 50
- 35
Continuous Source Current (Diode
Pulsed Drain Current b
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation b
Conduction) a
L = 0.1 mH
T C = 25 °C
T C = 125 °C
I S
I DM
I AS
E AS
P D
- 50
- 200
- 39
76
83
27
A
mJ
W
Operating Junction and Storage Temperature Range
T J , T stg
- 55 to + 175
°C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
LIMIT
UNIT
Junction-to-Ambient
Junction-to-Case (Drain)
PCB
Mount c
R thJA
R thJC
50
1.8
°C/W
Notes
a. Package limited.
b. Pulse test; pulse width ? 300 μs, duty cycle ? 2 %.
c. When mounted on 1" square PCB (FR-4 material).
d. Parametric verification ongoing.
S11-2065-Rev. C, 24-Oct-11
1
Document Number: 65157
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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